Etching

Etching is a process for pattern transfer and surface treatment in micro-nano device fabrication. Wide ranges of dry and wet etching systems are available in E6NanoFab center to support the diverse process requirement.

Dry Etching

Multi-chamber cluster tools such as ICP plasma etching and ion beam milling provide strong dry etching capabilities for various materials such as Si, III-V & III-N, oxides, metals, polymers and others.

Wet Etching

Our dedicated wet-benches support several wet processes such as RCA, standard cleaning, and orientation dependent Si KOH etching.

System Overview

The Integrated ICP Etch Cluster comprises Metal etch module, Dielectric etch module and III-V etch module is capable to handle 8” wafer with up to 8 mass flow controlled gas lines for each module.

 

1. The Metal Etch Module

Technical Specifications
  • Metal etch module
  • Base pressure 1×10-6 torr or better
  • 300 mm diameter alumina discharge chamber
  • kW 2 MHz RF generator and automatic matching for ICP etch plasma
  • 300 W 13.56 MHz RF generator and automatic matching unit for bias
  • Cryo-cooled/electrically heated etch lower electrode, working temperature: -150 ºC – +400 ºC
  • Helium backing between wafer and lower electrode promoting heat transfer
  • Fixed height with axial lift for wafer transfer
  • Laser endpoint detector
  • Standard gasline and MFC for nontoxic gases (SF6, Ar, O2, N2)
  • Bypassed gas line and MFC for toxic gas (Cl2, BCl3, HBr)
  • External gaspod gas line heating kit for low vapour pressure gases (BCl3)

2. Dielectric Module

Technical Specifications
  • Base pressure 1×10-6 torr or better
  • 300mm diameter alumina discharge chamber
  • kW 2 MHz RF generator and automatic matching unit for ICP etching source
  • 300 W 13.56 MHz RF generator and automatic matching unit for bias
  • Fluid heated/cooled electrode
  • Helium backing between wafer and lower electrode promoting heat transfer
  • Fixed height with axial lift for wafer transfer
  • Laser endpoint detector
  • Chamber Liner for effective etching and easier cleaning
  • Standard gas line and MFC for nontoxic gases (SF6, Ar, O2, N2, C4F8, CHF3)
  • Bypassed gas line and MFC for toxic gas (Cl2)

3. III-V Etch Module

Technical Specifications
  • Base pressure 1×10-6 torr or better
  • 300mm diameter alumina discharge chamber
  • 3kW 2MHz RF generator and automatic matching unit for ICP etching source
  • 600W 13.56MHz RF generator and automatic matching unit for bias
  • Cryo-cooled/electrically heated etch lower electrode, working temperature: -150ºC-+400 ºC
  • Rapid cooling from cryo to chiller mode, from 200°C to 20°C in 40 minutes
  • Helium backing between wafer and lower electrode promoting heat transfer
  • Fixed height with axial lift for wafer transfer
  • Laser endpoint detector
  • Chamber Liner for effective etching and easier cleaning
  • Standard gasline and MFC for nontoxic gases (SF6, Ar, O2, N2)
  • Bypassed gas line and MFC for toxic gas (Cl2, BCl3, H2, CH4)
  • External gaspod gas line heating kit for low vapour pressure gases (BCl3)

Location
E6-05-09, Cleanroom

Contact
Dr WANG Xinghua
Email: elewxing@nus.edu.sg
Tel: 660 16340

System Overview

This is an automatic, loadlocked system, providing precise contamination-free, high-aspect ratio etching for wafers up to 200mm. It is equipped with 350mm inductively coupled plasma ion source, generating a stable beam and delivering etching uniformity better than +/-4%. The water cooled vacuum chuck ensures process at low temperatures and high yields.

Location
E6-05-09, Cleanroom

Contact
Dr WANG Xinghua
Email: elewxing@nus.edu.sg
Tel: 660 16340

System Overview

Xenon Difluoride etcher is a kind of vapor etcher where reactive gas spontaneously reacts with a material in vapor phase.

This XeF2 can etch Si and Ge isotropically and offers excellent selectivity to various materials such as Al, SiO2, Si3N4 and photoresist.

Location
E6-05-09, Level 5 Cleanroom

Contact
Dr WANG Xinghua
Email: elewxing@nus.edu.sg
Tel: 660 16340

System Overview

Plasma Asher uses oxygen plasma to remove photoresist from wafers.

Technical specifications 

  • Capable to handle 200 mm wafers
  • Gas Flows: O2= 1000 – 2000 sccm. N2 – 100 –500 sccm
  • μ-wave Power: 2.45GHz, 1000 watt, continuously adjustable
  • Base pressure: ≤0.5 mtorr
  • Operating pressure: 0.5- 5 mtorr
  • IR temperature measurement outside chamber
  • Optical Endpoint Detector (based on plasma intensity signal)
  • Platen Temperature: 100° – 300° C
  • Uniformity: Within Wafer: 2% – 5%
  • Wafer to Wafer: 2% – 4%
  • Ash Rate: min < 200Å – max ≥ 3 μm./min.

Location
E6-05-09, Level 5 Cleanroom

Contact
Dr WANG Xinghua
Email: elewxing@nus.edu.sg
Tel: 660 16340

System Overview

  • Metal and dielectric planarization(Cu Al, SiO2, SiN..)
  • Within wafer non-uniformity 5%
  • Run to run non-uniformity 5%
  • Finishing surface roughness 1nm

    

Location
E6-01-02, Class 100 Cleanroom

Contact
Dr WANG Xinghua
Email: elewxing@nus.edu.sg
Tel: 660 16340