Deposition and Growth

The flexibility of E6NanoFab deposition and growth equipment allows custom configuration for wide variety of application and development purposes.

Thin Film Deposition and Material Growth

PICOSUN ALD

System overview

Dual reaction chamber, transfer chamber between deposition chambers. Able to handle up to 8” wafers size. Conformal coverage over 3D structures.

Technical specifications:

  • Deposition of Metal Nitrides, Oxides and sulphides
  • Six precursor inputs per reactor accommodating solid, liquid and gas precursors
  • Continuous Mode and Plasma Mode available for each reactor
  • 300W ICP for plasma-enhanced process
  • Four plasma gases per reactor complete with MFCs
  • Deposition temperature up to 500ºC
  • Deposition uniformity:
    Thermal Al2O3 – 1.5%
    Plasma enhanced Al2O3 – 1.5%
  • High aspect ratio depositions:
    Thermal – up to 2000:1
    Plasma enhanced – up to 50:1

Location
E6-05-09, Cleanroom

Contact
Dr WANG Xinghua
Email: elewxing@nus.edu.sg
Contact: 660 16340

System Overview

Able to handle up to 8” wafers size. High density deposition of Oxide, Nitride and amorphous Si

Technical specifications

  • Large area gas distribution shower-head design for high uniformity
  • Up to 8 mass flow controlled gas lines
  • 300W, 13.56 MHz RF generator and automatic matching unit for high density film deposition
  • 500W 100KHz LF generator and manual matching for stress controlled SiN process
  • 240mm diameter resistance heated aluminium electrode for temperatures up to 400°C, grounded
  • Electrical chamber wall heating up to 80°C minimizing chamber wall deposition

Location
E6-05-09, Cleanroom

Contact
Dr  WANG Xinghua
Email: elewxing@nus.edu.sg
Tel: 660 16340

System overview

Close proximity physical vapour deposition using magnetrons technology. Target-to-substrate distance adjustable between 50-100mm. Accepts 3” diameter target size, various sample sizes and max 8” wafer. DC and RF sputter capability, substrate bias with rotation. Confocal sputtering available.

Technical specification

  • Substrate temperature up to 800°C on substrate, capable of being heated in an O2 environment
  • PID temperature controller for substrate with +/- 1 degree C temp. stability
  • DC sputter power up to 1500W
  • RF sputter power up to 600W@ 13.56 mHz
  • Substrate RF bias 110W@ 13.56 mHz with rotation
  • Substrate carrier 3″ working distance adjustment (incident ion energy from 50eV to 300eV)
  • Process gases, Ar, N2, O2
  • Metallic, oxide and composite targets
  • Build in RHEED for film deposition monitor
  • Build in RGA for leak detection
  • Uniformity: RF sputtering SiO2 and reactive sputtering TiN: 6″ wafer 1.5%, 8″ wafer 5%

Location
E6-01-01, Cleanroom

Contact
Htike AUNG
Email: htikeaung@nus.edu.sg
Tel: 660 17029 / 6601 7041

System overview

Able to handle up to 8” wafers size. For deposition metals, dielectrics, super-lattices, alloys.

Technical specifications

  • Chamber size:  36″ high x 24″ ID
  • 10 kW High Voltage Power Supplies for e-beam sourceDual-beam covering 4 crucibles for co-deposition and multi-layer deposition
  • Thermal evaporation source with molybdenum resistive boats, 3kW Power Supply
  • Crystal deposition controller for co-deposition
  • Substrate rotation and 300W RF/DC biasing (incident ion energies of 50 to 300 eV)
  • Substrate heating up to 800°C capable of being heated in an O2 environment
  • PID temperature controller for substrate with +/- 1 degree C temprature stability
  • Build in RGA

Location
E6-01-01, Cleanroom

Contact
Htike AUNG
Email: htikeaung@nus.edu.sg
Tel: 660 17029 / 6601 7041

System Overview

The fully integrated MBE system allows deposition of hetero-structures and semiconductors. A II-IV and a IV group deposition chambers are integrated with transfer chamber and load lock. The system has 5 ports for each chamber.

Technical specifications

  • Growth Chamber (Group II-IV)
  • Base pressure: better than 5 x 10-10 Torr
  • Effusion Cell for Chalcogen material up to 1300ºC (S, Se, Te, P)
  • Electron beam gun for evaporation of transition metal (Mo, Ta, W, Hf, Zr)
  • Beam flux monitoring: Nude gauge type, 7.5 x 10-4 Torr to approximately 7.5 x 10-11 Torr
  • Substrate up to handle 2inch wafer,
  • Heating up to1000ºC with heating rate up to 20 ºC per minute
  • Reflection High Energy Electron Diffraction (RHEED): Filament Hair pin type with Electron beam diameter 90 μm, 30kV, Fluorescent screen: 90mm diameter; bakeable up to 200 ºC

MBE Growth Chamber

  • Base pressure: better than 5 x 10-10 Torr
  • Effusion Cell for Chalcogen material up to 1300ºC (Si, Ge, Sn)
  • Electron beam gun for evaporation of carbon
  • Beam flux monitoring: Nude gauge type, 7.5 x 10-4 Torr to approximately 7.5 x 10-11 Torr
  • Substrate up to handle 2inch wafer,
  • Heating up to1000 ºC with heating rate up to 20 ºC per minute
  • Reflection High Energy Electron Diffraction (RHEED): Filament Hair pin type with Electron beam diameter 90 μm, 30kV, Fluorescent screen: 90mm diameter; bakeable up to 200 ºC

Location
E6-06-01

Contact
Patrick TANG
Email: patrick@nus.edu.sg
Tel: 660 17029 / 660 17041

Annealing Process

System Overview

High temperature annealing for various materials

Technical specifications

  • Wafer size: up to 8” wafer
  • Temperature up to 1050 degC
  • Ramp rate up to 300degC/sec
  • 6 individual controllable thermal zone by infrared lamp
  • Heat uniformity +/-2C for 8 inch wafer 1000C
  • Anneal in N2, O2
  • Annealing under vacuum environment (10e-6 torr)

Location
E6-01-01

Contact
Dr WANG Xinghua
Email: elewxing@nus.edu.sg
Tel: 660 16340

Furnance system for wet and dry oxidation in the temperature range of 200 to 1200 °C will be available in mid year of 2019. 

Location
E6-05-09, Cleanroom

Contact

Patrick TANG
Email: patrick@nus.edu.sg
Tel: 660 17029 / 6601 7041

The Magnetic Annealing System will be made available in the second half of year 2019 to support the process of enhancing the performance of magnetic devices and materials.

Location
E6-01-02, Class 100 Cleanroom

Contact
LOH Fong Leong
Email: elelohfl@nus.edu.sg
Tel: 660 17030

Magnetic Processing

System Overview

The  SCIA Coat 200 is designed for homogeneous coating of high precision optics such as X-ray mirrors and optical filters with the technology of Dual Ion Beam Deposition (DIBD). The system is also equipped with a RF350-e ion beam source for etching process.

Technical Specifications

  • Cylindrical ICP ion beam source RF350-e, beam diameter of 350 mm at extraction grid,
  • Inductively coupled plasma (ICP) based plasma excitation with RF generator at 4.00 MHz
  • ion energy: < 100 eV; Max. ion energy: > 1500 eV
  • Ion current density up to 1 mA/cm² with flat grid system
  • Wafer chuck for 200 mm wafers
  • Substrate rotation up to 20 rpm, Substrate holder tilt between 0° – 170° in 0.1° steps
  • A standard 4-port handling robot for fully automatic handling of wafers
  • Load-lock for loading of three 200 mm wafers
  • HAL IMP 301/3F Ion Milling End Point Detection System
  • With Secondary Ion Mass Spectroscopy (SIMS), an in-situ measurement of sputtered material from substrate can be done.
  • The system is controlled by Windows 7 with fully SEMI-standard compatible software suite.
  • Etch rate: > 8 nm/min, uniformity: ≤ 8 % 3σ, reproducibility (10 runs) ≤ 3 % 3σ.
  • Deposition rate (Ta) > 6 nm/min, uniformity: ≤ 3 % 3σ , reproducibility (10 runs) ≤ 2 % 3σ

Location
E6-01-02, Class 100 Cleanroom

Contact
Loh Fong Leong
Email: lohfl@nus.edu.sg / e6nanofab@nus.edu.sg
Tel:660 17030

Multi Chamber Sputter; magnetic nanofabrication processing;

System Overview

Magest S200 is a batch-processing type sputtering system correspond to MRAM production. This system consists of Autoloader, Transfer Chamber, Pre-clean Chamber , RTP Chamber & Sputter chamber sections.

Technical specifications

  • Autoloader: Dual-arm ROBOT, Alignment station, 2 Stage cassette Interface, metal wafer stocker for 200mm wafer (25 pcs. of wafers capacity)
  • Transfer Chamber: Wafer transfer robot Keytran-IV (KRC-4000Z) Dual arm
  • Pre-clean Chamber: 2 gas Lines (Ar 100sccm, Ar 5 sccm), LT-ICP Electrode and Ceramic Shield.
    • ESC hot plate stage and RF Power supply
  • RTP Chamber: (Ar 2SLM, N2 100sccm, O2 5sccm, Ar 100sccm), Quartz Pin stage, Gold Image Furnace (9zone Lamp)
  • Sputter Chambers: The system has four sputter chambers with wafer stage rotation. Each sputter chamber has a sputter down mechanism with a permanent magnet rotation magnetron cathode. The sputter chamber can form the continual membrane of maximum of 3 layer loads “triple gun cathode”.
    • Sputter Chamber-1 (DC/RF Sputter): (Ar 100 sccm, Ar 5 sccm),
    • Sputter Chamber-2 (DC Sputter): (Ar 100 sccm, Ar 5 sccm),
    • Sputter Chamber-3 (DC Co-Sputter): (Ar 100 sccm, N2 50 sccm, Ar 5 sccm, Kr 100 sccm), ESC hot plate stage
    • Sputter Chamber-4 (DC/RF Sputter): (Ar 100 sccm, N2 100sccm, Ar 5 sccm),
    • Control System: This system is fully automatically controlled by ULVAC’s CyberCELL, and this software has a flexible design consisting of fore transfer modes: series, parallel, series/parallel and random access. Operation is performed only on a Cluster Tool Controller (CTC) that has operator—friendly-human-interface design.

Location
E6-01-02, Class 100 Cleanroom

Contact
Dr. WANG Xinghua
Email: elewxing@nus.edu.sg / e6nanofab@nus.edu.sg
Tel: 660 16340