Characterization and Metrology

A large of group of measurement and characterization tools  are available  to provide magnetic characterization, electrical measurement, material characterization and process control parameters measurement throughout the fabrication process flow.

Magnetic Characterization

System Overview

The EZ 9 VSM is dedicated for measurement of the magnetic moment of materials as a function of field, angle, temperature, time.

  • Sensitivity up 10e-06emu.
  • Achievable maximum magnetic field from 2.6 T to 3.12 T with sample space from 16mm to 3.5mm.
  • Working temperature ranges from 77K to 1000K
  • Sample Size
    – Available measurement types for sample size are: Virgin Curve, Hysteresis Loop, IRM and Virgin Curve, DC Demagnetization, Combination Measurements, Angular Remanence, AC Remanence, Time Dependence, Temperature Scan, Torque and Miyajima Method.

     e6nanofab; nanofabrication facility

Location
E6-05-08G
Level 5 Characterization Room

Contact
Loh Fong Leong
Email: elelohfl@nus.edu.sg
Tel: 660 17030

System Overview

By application of the magneto optical Kerr effect, the rotation of the polarization plane of the reflected light is transformed into a contrast by means of an analyser when the domain magnetization direction change.

The E6NanoFab Evico Magneto-Optical Kerr Microscope & Magnetometer in is able to visualisation of magnetic domains and magnetization processes as well as for optically recording magnetization curves qualitatively on all kinds of magnetic materials, including bulk specimens like sheets or ribbons, magnetic films and multilayers, patterned films or micro- and nanowires.

The In-plane magnetic field range from 10-4 Tesla up to 1.3 Tesla, depends on pole piece configuration and choice of coils. And the observation area is 8 mm x 8 mm min and 30 mm x 30 mm max.

    
Location
E6-05-08A
Level 5 Characterization Room
Contact
Loh Fong Leong
Email: elelohfl@nus.edu.sg
Tel: 660 17030

System Overview

    

  • The MPMS3 SQUID magnetometer allows DC and VSM Data Acquisition
  • Options of horizontal rotator allows for sample measurement as a function of angle
  • Manual insertion utility probe with 5 leads for variety resistivity measurement
  • Oven and high vacuum for high temperature measurement
  • AC susceptibility for magnetization dynamics measurement
  • Ultra-low field for superconductivity transition temperature and spin glass transition temperature measurement

Location
E6-05-08F
Level 5 Characterization Room

Contact
Loh Fong Leong
Email: elelohfl@nus.edu.sg
Tel: 660 17030

Material Characterization and Process Control

 System Overview 

An ellipsometer can be used to characterize many material properties, such as thickness, crystallinity, doping concentration, band gap, and refractive index. It measures the change in polarization of an incident light beam that interacts with and reflects off the sample and compares it to a model.

Technical Specifications

  • High-resolution UV-VIS (230 nm – 900 nm) scanning spectrometer with FWHM bandwidth less than 0.5 nm.
  • High-resolution NIR extension up to 2500 nm: InGaAs detector directly adapted on the UV-Visible spectrometer, nominal wavelength range of 900 nm to 2500 nm, FWHM bandwidth less than 3 nm.
  • Automatic incidence angle range control: 12.5 to 90 degrees.
  • Independent adjustment of analyzer and polariser arms.
  • Microspot optics (theoretical spot dimensions: 365 µm × 470 µm at 75° on sample).
  • Ultra microspot option: additional slit allowing smaller spot size down to 60 µm at optical arm output (spot size on sample: 60 µm × 120 µm at 60°).
  • Automated sample stage enabling X-Y cartography of the sample. Includes special software for sample stage control, data collection, and graphic display.
  • Motorized Z allowing automatic focusing on the sample.
  • Accommodates samples up to 200 mm in diameter.

Availability
Second Quarter, 2019

Location
E6-05-09, Cleanroom

Contact
Email: e6nanofab@nus.edu.sg
Tel: 660 16340

System Overview

The Park NX20 AFM features the world’s only True Non-Contact™ mode, allowing users to take both repeated measurements without damaging sample surface while preserving tip sharpness. Reputed as the world’s most accurate large sample AFM, The Park NX20 is a leading nano metrology tool for failure analysis and large sample research.

Technical Specifications

  • Large sample measurement of up to 300 mm.
  • Park SmartScan™ – powerful operating software automates processes which drastically improve efficiency and guides user through every step of the imaging process.

Incorporated Scanning Modes

  • True Non-Contact™ mode
  • Dynamic contact mode
  • Contact mode
  • Magnetic Force Microscopy (MFM)
  • Phase Imaging
  • Lateral Force Microscopy (LFM)
  • Force-Distance (F/D) Spectroscopy
  • Force volume Imaging
  • Electricstatic Force Microscopy (EFM)
  • Piezoresponse Force Microscopy (PFM)
  • Scanning Kelvin Probe Microscopy (SKPM)
  • Force Modulation Microscopy (FMM)
  • Nanoindentation
  • Nanolithography
  • Variable Enhanced Conductive AFM (VECA)
  • Scanning Capacitance Microscopy (SCM)

AFM, MFM, CAFM, SCM

Location
E6-1-02, Class 100 Cleanroom

Contact
Loh Fong Leong
Email: elelfl@nus.edu.sg
Tel: 6601 7030

System Overview

e6nanofab; unveristy nabofabrication facility

I. Unmatched performance

  • 4Å repeatability delivers industry-leading accuracy
  • Single-arch design provides breakthrough scan stability
  • Leading-edge “smart electronics” establish new low noise benchmark
  • New hardware configuration offers 40% faster data collection times than prior generations
  • 64-bit, parallel processing Vision64 software architecture delivers up to 10 times faster data analyses

II. Unprecedented efficiency and ease of use

  • Intuitive Vision64™ user interface workflow simplifies operation
  • Self-aligning styli enables effortless tip exchange
  • Incomparable value from the world leader in stylus profilers
  • Bruker delivers premier performance in an affordable package
  • Single sensor design offers low force and extended range in a single platform
Location
E6-05-09, Level 1 Cleanroom
Contact
Dr WANG Xinghua
Email: elewxing@nus.edu.sg
Contact: 660 16340

System Overview

The Nikon Eclipse L200 series performs exceptionally precise optical inspection of wafers, photo masks, reticles and other substrates.

Technical Specifications

Built-in Episcopic Illumination; built-in power sources for motorized control; light intensity control; aperture diaphragm control.

Focusing Mechanism

  • Cross travel: 29mm
  • Coarse: 12.7mm per rotation (torque adjustable, refocusing mechanism)
  • Fine: 0.1mm per rotation (in 1µm increments)
Episcopic Illuminator
  • 12V/100W halogen lamp light source built-in; otorized aperture diaphragm
  • fixed field diaphragm (with focus target)
Eyepiece Tube
  • L2TT Ultrawide tilting trinocular eyepiece tube (tilt angle 0-30°);F.O.V: 25mm
  • 2-way optical path changeover
Stage
  • 8 x 8 Stage; stroke: 205 x 205mm
  • Coarse/fine movement changeover possible
  • Fixed-position X-Y fine-movement controls
Eyepieces
  • CFI eyepiece lens series
Objectives
  • CFI60 LU/L Plan series

 

Location
E6-05-09, Cleanroom

 

Contact
Dr Sandipan Chakraborty
Email: elesnch@nus.edu.sg
Tel: 660 16304

System Overview

The compact Samco UV-1 Ozone Cleaner utilizes a unique combination of ultraviolet light, ozone and controlled heating to etch organic materials.

 

Technical Specifications

  • Substrate Size – upto 150mm (6 inch)
  • Maximum Sample Thickness – 5mm (17mm, between stage and UV lamp)
  • UV light Source – Hot cathode, low-pressure mercury vaper lamp (primary wavelengths:254 nm and 185 nm)
  • Ozone generator – Silent discharge type; at least 5g/m3 at 0.5 liter/min oxygen flow rate
  • UV-lamp and Ozone generator switches – can be switched ON or OFF during the process
  • Substrate heater – Ambient to 300°C
  • Digital Timer –  0 to 99 min:59 sec
  • Ozone killer – Common metal honeycomb type ozone scrubber removes residual ozone in the process gas exhaust stream. Concentration of ozone at the exhaust is less than 0.1PPM
  • Dimensions – 450mm(W)x400mm(D)x411mm(H)

Applications

  • Removing organic contamination
  • Pre-cleaning wafers prior to deposition
  • Descumming photoresist and polyimide
  • Cleaning prior to wafer bonding
  • Surface modification for better adhesion
  • UV curing
  • Growth of thin stable oxide films (GE, GaAs, Si)

Location
E6-01-09, Level 1 Cleanroom, Class 100

Availability
First Quarter, 2019

Contact
Dr Sandipan Chakraborty
Email: elesnch@nus.edu.sg
Tel: 660 16304

Metrology

System Overview 

The Bruker Dimension Icon AFM incorporates the latest evolution of Bruker’s industry-leading nanoscale imaging and characterization technologies on a large sample tip-scanning AFM platform. The Icon’s temperature-compensating position sensors render noise levels in the sub-angstroms range for the Z-axis, and angstroms in X-Y.

Technical Specifications

  • ScanAsyst® Imaging – ScanAsyst is a PeakForce Tapping based image optimization technique that enables every user to create the highest resolution AFM images using single-touch scanning.
  • Conventional Tapping Mode – for topology/roughness/step-height measurements
  • Magnetic Force Microscopy (MFM) –  can be used to image both naturally occurring and deliberately written domain structures in magnetic materials
  • Electric Force Microscopy (EFM) – is used for electrical failure analysis, detecting trapped charges, mapping electric polarization, and performing electrical read/write, among other applications.
  • Kelvin Probe Force Microscopy (KPFM) – is widely used for analysing the surface potential of the structures.
  • Conductive AFM (CAFM) – used to measure and map current of the sample in the 2pA to 1µA range while simultaneously collecting topographic information.

Location
E6-5-08A

Contact
Loh Fong Leong
Email: elelohfl@nus.edu.sg
Tel: 6601 7030

System Overview

  • Process viewing cut & see
  • Failure analysis

Technical Specifications

  • Electron Gun: High brightness Schottky emitter
  • Resolution in Standard mode (In-Beam SE): 0.7 nm at 15 kV ;1.4 nm at 1 kV; 1.7 nm at 500V Resolution in Beam Deceleration mode: 1.0 nm at 1 kV; 1.2 nm at 200 V
    • Magnification at 30kV: 4x– 1,000,000x
  • Maximum Field of View: 4.3 mm at WD analytical 5 mm; 7.5 mm at WD 30 mm
  • Electron Beam Energy: 200 eV to 30 keV / down to 50 eV with Beam Deceleration mode
  • Probe Current: 2 pA to 400 nA
  • FIB Resolution: <2.5 nm at 30 kV (at SEM-FIB coincidence point)
  • Magnification: minimum 150x at coincidence point and 10 kV
    (corresponding to 1 mm field of view), maximum 1,000,000x
  • Accelerating Voltage: 0.5 kV to 30 kV
  • Ion Gun: Ga Liquid Metal Ion Source
  • Probe Current: 1 pA to 50 nA
  • SEM-FIB Coincidence at:
    • WD 5 mm for SEM
    • WD 12 mm for FIB SEM
    • FIB angle: 55°
  • Gas Injection System: Tungsten and Platinum
  • Up to 8” wafer inspection in both SEM as well as in FIB operation enabled by the new triple lens design.
  • Maximum Specimen Height: 96 mm (with rotation stage); 137 mm (without rotation stage)
  • Integrated TOF-SIMS with a compact TOFSIMS detector and uses FIB column as primary ion beam with 3D compositional analysis.
Location
E6-03-02
Level 3 Metrology

Contact
Linn Linn
Email: elelinnl@nus.edu.sg
Tel: 660 17035

System Overview

FESEM JSM-6700F is a high-resolution and easy-to-operate scanning electron microscope, which employs a field-emission gun for the electron source and state-of-the-art computer technology for the image-display system. This system detects the secondary electrons to image the topography of the sample. The minimum feature is around 50nm.

Location
E6-03-02
Level 3 Metrology
Contact
Linn Linn
Email: elelinnl@nus.edu.sg
Tel: 6601 7035

System Overview

  • NOVA NANOSEM 230 by FEI

Model Year: 2009

High resolution field  emission Scanning Electron Microscope (SEM) with retractable low-kV high-contrast detector;  through lens detector; backscatter detector; SED; Auto stage; Chamber CCD; SE-cathode electron gun; multiple hole aperture.

  • Technical Specifications
    • Around 50nm
    • Detector: SED, GBSD, BSD
    • Stage:X, Y, Z, R Axis motor drive
    • Beam landing energy: 50 V – 30 kV
    • Probe current: 0.6 pA – 100 nA
    • Tilt: Manual
Location
E6-03-02
Level 3 Metrology

Contact
Linn Linn
Email: elelinnl@nus.edu.sg
Tel: 660 17035